NJVMJD44H11G datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  NJVMJD44H11G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor NJVMJD44H11G Collector- Emitter Voltage Vceo Max: 80 V Collector-emitter Saturation Voltage: 1 V Configuration: Single Continuous Collector Current: 8 A Dc Current Gain Hfe Max: 60 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 85 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: D-PAK Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Gain Bandwidth Product fT: 85 MHz DC Current Gain hFE Max: 60
• Количество страниц
  9 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  136,53 KB

NJVMJD44H11G datasheet скачать

NJVMJD44H11G datasheet